| PART |
Description |
Maker |
| PA1223 |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
|
Tyco Electronics
|
| MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
| PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
| MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
| PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| MRF6S21100NBR1 MRF6S21100N |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
|
Freescale Semiconductors
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PFM21030 PFM21030F PFM21030SM |
2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
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